# Micron and SK Hynix Shares Slip as China's CXMT Advances Next-Gen DRAM Memory

- URL: https://stocks.freetheai.org/news/micron-and-sk-hynix-shares-slip-as-china-s-cxmt-advances-next-gen-dram-memory-ba4943
- Published: 2026-10-12T07:01:49Z
- Category: technology; sentiment: bearish; impact: medium
- Symbols: [NASDAQ:MU](https://stocks.freetheai.org/symbols/NASDAQ-MU), [KRX:000660](https://stocks.freetheai.org/symbols/KRX-000660)
- Written by our AI from expert market sources across the web for FreeTheAI Stocks, built by Vibhek Soni
- How write-ups are made: https://stocks.freetheai.org/how-we-write
- Not financial advice: https://stocks.freetheai.org/disclaimer

Shares of major memory chipmakers Micron Technology, Inc. (MU) and SK Hynix Inc. (000660) traded lower following an announcement from ChangXin Memory Technologies (CXMT) regarding progress on a new dynamic random-access memory (DRAM) architecture. Micron dipped 0.66%, while SK Hynix declined 4.52%.

The Chinese semiconductor producer announced plans to introduce a server-memory product built on a 4F square cell architecture by late 2026. Current commercial DRAM uses a 6F square design. By switching from horizontal to vertical transistor channels through a Vertical Surrounding Gate design, CXMT aims to squeeze more memory cells onto each chip, potentially increasing storage density and reducing energy consumption as it seeks to close the technological gap with global rivals.

Investors are monitoring how quickly CXMT can execute on its roadmap, including plans to roll out DDR5 registered dual in-line memory modules for enterprise servers before the end of the year. Industry watchers will also track competing developments from global memory leaders, as SK Hynix outlined a 4F square roadmap in 2025 and Samsung Electronics targets sub-10-nanometer 4F square DRAM production by 2028.

## Key points

- Micron Technology, Inc. (MU) fell 0.66% and SK Hynix Inc. (000660) dropped 4.52% following competition updates from China.
- ChangXin Memory Technologies plans to release a server-memory product based on 4F square DRAM architecture by the end of 2026.
- The 4F square design uses vertical transistor channels to increase memory cell density and improve power efficiency over 6F square DRAM.
- CXMT also intends to release new DDR5 enterprise server memory modules by the end of the year.

## Questions and answers

### Why did Micron and SK Hynix stocks fall?

Shares fell after China's ChangXin Memory Technologies announced progress on a next-generation 4F square DRAM architecture for server memory, raising competitive concerns among major chipmakers.

### What is 4F square DRAM technology?

It is an advanced memory design that switches from horizontal to vertical transistor channels, allowing more memory cells to fit on a single chip to boost storage density and power efficiency compared to standard 6F square DRAM.

### When will CXMT launch its next-generation DRAM products?

CXMT plans to launch DDR5 registered dual in-line memory modules for enterprise servers by the end of the year, followed by a 4F square server-memory product by late 2026.